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PD- 95139 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free l IRF830AS/LPbF HEXFET(R) Power MOSFET VDSS 500V RDS(on) max 1.40 ID 5.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified (See AN 1001) l D2Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 5.0 3.2 20 3.1 74 0.59 30 5.3 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies: l l Two Transistor Forward Half Bridge and Full Bridge Notes through are on page 10 www.irf.com 1 04/21/04 IRF830AS/LPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 2.0 --- --- --- --- Typ. --- 0.60 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 1.4 VGS = 10V, ID = 3.0A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 3.0A 24 ID = 5.0A 6.3 nC VDS = 400V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 5.0A ns --- RG = 14 --- RD = 49,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.8 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 10 21 21 15 620 93 4.3 886 27 39 Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 230 5.0 7.4 Units mJ A mJ Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)* Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. --- --- Max. 1.7 40 Units C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton 2 Conditions D MOSFET symbol --- --- 5.0 showing the A G integral reverse --- --- 20 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 5.0A, VGS = 0V --- 430 650 ns TJ = 25C, IF = 5.0A --- 2.0 3.0 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF830AS/LPbF 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 1 0.1 4.5V 20s PULSE WIDTH T = 25 C J 1 10 100 4.5V 0.01 0.1 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ID = 5.0A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 C TJ = 25 C 1 1.5 1.0 0.5 0.1 4.0 V DS = 50V 20s PULSE WIDTH 7.0 5.0 6.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF830AS/LPbF 10000 VGS , Gate-to-Source Voltage (V) V GS = C iss = C rs s = C oss = 0V, f = 1M Hz Cg s + C g d , Cd s SHO RTE D C gd Cds + C gd 20 ID = 5.0A 16 C, Capacitance (pF) 1000 VDS = 400V VDS = 250V VDS = 100V C iss 12 100 C os s 8 10 4 C rss 1 1 10 100 1000 A 0 FOR TEST CIRCUIT SEE FIGURE 13 16 20 0 4 8 12 24 V D S , D ra in-to-S ource V oltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) 10us 10 10 TJ = 150 C 100us 1ms 10ms 1 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF830AS/LPbF 5.0 VDS VGS RD 4.0 RG D.U.T. + I D , Drain Current (A) -VDD 3.0 10V Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF830AS/LPbF 1 5V 500 EAS , Single Pulse Avalanche Energy (mJ) VDS L D R IV E R 400 TOP BOTTOM ID 2.2A 3.2A 5.0A RG 20V D .U .T IA S tp + V - DD 300 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD V D S a v , A valanche V oltage (V ) 790 VG 785 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 780 50K 12V .2F .3F 775 D.U.T. VGS 3mA + V - DS 770 0.0 1.0 2.0 3.0 4.0 5.0 A I a v , A v alanc he C urrent (A ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com IRF830AS/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFET www.irf.com 7 IRF830AS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H I S IS AN IR F 53 0 S WIT H L OT COD E 8 02 4 AS S E MB L E D ON WW 0 2 , 2 00 0 IN T H E AS S E MB L Y L IN E "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S D AT E COD E YE AR 0 = 200 0 WE E K 02 L IN E L OR INT E R NAT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S DAT E COD E P = DE S IGNAT E S L E AD -F R E E P R ODU CT (OP T IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E COD E 8 www.irf.com IRF830AS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E X AMP L E : T H IS IS AN IR L 3103L L OT COD E 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com 9 IRF830AS/LPbF D2Pak Tape & Reel Information TRR 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1 .60 (.06 3) 1 .50 (.05 9) 0.3 6 8 (.0 1 4 5 ) 0.3 4 2 (.0 1 3 5 ) F E E D D IR E C TI O N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .42 (.6 09 ) 1 5 .22 (.6 01 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0.9 0 (.42 9 ) 1 0.7 0 (.42 1 ) 1 .7 5 (.0 69 ) 1 .2 5 (.0 49 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 36 ) 4 .5 2 (.1 78 ) F E E D D I R E C T IO N 13 .5 0 (.5 32 ) 12 .8 0 (.5 04 ) 27 .4 0 (1.07 9) 23 .9 0 (.9 41 ) 4 33 0.0 0 (14 .17 3) MAX. 6 0.00 (2 .36 2) M IN . N O T ES : 1. C O M F O R M S T O EIA- 418 . 2. C O N T R O L LIN G D IM E N SIO N : M ILL IM E T ER . 3. D IM EN S IO N M E A SU R E D @ HU B . 4. IN C L U D ES F LA N G E D IST O R T IO N @ O U TE R ED G E. 30.4 0 (1.1 97 ) MAX. 2 6 .4 0 (1 .03 9) 2 4 .4 0 (.9 61 ) 4 3 Notes: Repetitive rating; pulse width limited by Starting TJ = 25C, L = 18mH TJ 150C max. junction temperature. ( See fig. 11 ) RG = 25, IAS = 5.0A. (See Figure 12) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 5.0A, di/dt 370A/s, VDD V(BR)DSS, Uses IRF830A data and test conditions * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 10 www.irf.com |
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